FDD5353
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 11.5A/50A DPAK
MOSFET N-CH 60V 11.5A/50A DPAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 11.5A (Ta), 50A (Tc) 3.1W (Ta), 69W (Tc) ytmonterad TO-252AA
N-Kanal 60 V 11.5A (Ta), 50A (Tc) 3.1W (Ta), 69W (Tc) ytmonterad TO-252AA
Beskrivning (eng)
Beskrivning (eng)
The FDD5353 is an N-Channel Power Trench® MOSFET with a maximum Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 50A at a case temperature (TC) of 25°C. It features a low on-state resistance (RDS(on)) of 12.3 mΩ at VGS = 10V and ID = 10.7A, making it suitable for high-efficiency applications. The device is housed in a DPAK package and is RoHS compliant.
The FDD5353 is an N-Channel Power Trench® MOSFET with a maximum Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 50A at a case temperature (TC) of 25°C. It features a low on-state resistance (RDS(on)) of 12.3 mΩ at VGS = 10V and ID = 10.7A, making it suitable for high-efficiency applications. The device is housed in a DPAK package and is RoHS compliant.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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