ESD8351MUT5G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TVS DIODE 3.3VWM 11.2VC 2X3DFN
TVS DIODE 3.3VWM 11.2VC 2X3DFN
Detaljerad specifikation
Detaljerad specifikation
11.2V Clamp 5A (8/20µs) Ipp Tvs Diode Ytmonterad 2-X3DFN (15.24mm x 7.62mm) (0.6x0.3) (0201)
11.2V Clamp 5A (8/20µs) Ipp Tvs Diode Ytmonterad 2-X3DFN (15.24mm x 7.62mm) (0.6x0.3) (0201)
Beskrivning (eng)
Beskrivning (eng)
The ESD8351MUT5G from onsemi is a low capacitance ESD protection diode designed for high-speed data lines. It features a working peak voltage of 3.3V, a clamping voltage of 11.2V at 5A, and a maximum peak pulse current of 5A (8/20µs). Packaged in a 2-X3DFN (0.6x0.3) case, it provides robust protection against ESD events, making it ideal for applications like USB 2.0 and eSATA.
The ESD8351MUT5G from onsemi is a low capacitance ESD protection diode designed for high-speed data lines. It features a working peak voltage of 3.3V, a clamping voltage of 11.2V at 5A, and a maximum peak pulse current of 5A (8/20µs). Packaged in a 2-X3DFN (0.6x0.3) case, it provides robust protection against ESD events, making it ideal for applications like USB 2.0 and eSATA.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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