EMD53T2R
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN/PNP PREBIAS 0.15W EMT6
TRANS NPN/PNP PREBIAS 0.15W EMT6
Detaljerad specifikation
Detaljerad specifikation
Förhandsbiaserad bipolär transistor (BJT) 1 NPN, 1 PNP - Förhandsbiaserad (Dual) 50V 100mA 250MHz 150mW Ytmonterad EMT6
Förhandsbiaserad bipolär transistor (BJT) 1 NPN, 1 PNP - Förhandsbiaserad (Dual) 50V 100mA 250MHz 150mW Ytmonterad EMT6
Beskrivning (eng)
Beskrivning (eng)
The EMD53T2R from Rohm Semiconductor is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations in a single package. This dual transistor is designed for surface mount applications, offering a maximum collector-emitter voltage of 50V and a collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 150mW, it is suitable for high-frequency switching and amplification tasks. The EMT6 package ensures compact integration into various electronic circuits, making it ideal for space-constrained designs.
The EMD53T2R from Rohm Semiconductor is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations in a single package. This dual transistor is designed for surface mount applications, offering a maximum collector-emitter voltage of 50V and a collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 150mW, it is suitable for high-frequency switching and amplification tasks. The EMT6 package ensures compact integration into various electronic circuits, making it ideal for space-constrained designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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