DTD543EE3TL
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
TRANS PREBIAS NPN 12V 0.5A EMT3
TRANS PREBIAS NPN 12V 0.5A EMT3
Detaljerad specifikation
Detaljerad specifikation
Förbise Bipolär Transistor (BJT) NPN - Förbise + Diod 12 V 500 mA 260 MHz 150 mW ytmonterad EMT3
Förbise Bipolär Transistor (BJT) NPN - Förbise + Diod 12 V 500 mA 260 MHz 150 mW ytmonterad EMT3
Beskrivning (eng)
Beskrivning (eng)
The DTD543EE3TL from Rohm Semiconductor is a pre-biased NPN bipolar transistor designed for efficient switching and amplification applications. It operates at a maximum voltage of 12V and can handle a collector current of up to 500mA, making it suitable for various electronic circuits. With a transition frequency of 260 MHz and a power dissipation of 150 mW, this surface-mounted device (EMT3) is ideal for compact designs. Its pre-biased configuration simplifies circuit design by integrating a diode, enhancing performance in signal processing applications.
The DTD543EE3TL from Rohm Semiconductor is a pre-biased NPN bipolar transistor designed for efficient switching and amplification applications. It operates at a maximum voltage of 12V and can handle a collector current of up to 500mA, making it suitable for various electronic circuits. With a transition frequency of 260 MHz and a power dissipation of 150 mW, this surface-mounted device (EMT3) is ideal for compact designs. Its pre-biased configuration simplifies circuit design by integrating a diode, enhancing performance in signal processing applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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