DTC124ECAHZGT116
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
TRANS PREBIAS NPN 0.1A SST3
TRANS PREBIAS NPN 0.1A SST3
Detaljerad specifikation
Detaljerad specifikation
Förbise Biaiserad Bipolär Transistor (BJT) NPN - Förbise Biaiserad 100 mA 250 MHz 350 mW Ytmonterad SST3
Förbise Biaiserad Bipolär Transistor (BJT) NPN - Förbise Biaiserad 100 mA 250 MHz 350 mW Ytmonterad SST3
Beskrivning (eng)
Beskrivning (eng)
The DTC124ECAHZGT116 from Rohm Semiconductor is a pre-biased NPN bipolar transistor designed for efficient switching and amplification applications. This device supports a maximum collector current of 100 mA and operates effectively at frequencies up to 250 MHz, making it suitable for high-speed applications. With a power dissipation rating of 350 mW, this surface-mounted transistor is ideal for compact designs. Its pre-biased configuration simplifies circuit design by eliminating the need for external biasing components, enhancing overall system reliability.
The DTC124ECAHZGT116 from Rohm Semiconductor is a pre-biased NPN bipolar transistor designed for efficient switching and amplification applications. This device supports a maximum collector current of 100 mA and operates effectively at frequencies up to 250 MHz, making it suitable for high-speed applications. With a power dissipation rating of 350 mW, this surface-mounted transistor is ideal for compact designs. Its pre-biased configuration simplifies circuit design by eliminating the need for external biasing components, enhancing overall system reliability.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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