DTC114EM3T5G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PREBIAS NPN 50V SOT723
TRANS PREBIAS NPN 50V SOT723
Detaljerad specifikation
Detaljerad specifikation
Förbise Bia Bipolär Transistor (BJT) NPN - Förbise 50 V 100 mA 260 mW Ytmonterad SOT-723
Förbise Bia Bipolär Transistor (BJT) NPN - Förbise 50 V 100 mA 260 mW Ytmonterad SOT-723
Beskrivning (eng)
Beskrivning (eng)
The DTC114EM3T5G is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a maximum collector-emitter voltage of 50 V, with a continuous collector current of 100 mA and a power dissipation of 260 mW. This device simplifies circuit design by integrating a bias resistor network, reducing component count and board space.
The DTC114EM3T5G is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a maximum collector-emitter voltage of 50 V, with a continuous collector current of 100 mA and a power dissipation of 260 mW. This device simplifies circuit design by integrating a bias resistor network, reducing component count and board space.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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