DTC113EET1G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PREBIAS NPN 50V 0.1A SC75
TRANS PREBIAS NPN 50V 0.1A SC75
Detaljerad specifikation
Detaljerad specifikation
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW Ytmonterad SC-75, SOT-416
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW Ytmonterad SC-75, SOT-416
Beskrivning (eng)
Beskrivning (eng)
The DTC113EET1G is a pre-biased NPN bipolar transistor designed for surface mount applications. It features a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 200 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
The DTC113EET1G is a pre-biased NPN bipolar transistor designed for surface mount applications. It features a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 200 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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