DN3765K4-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 650V 300MA TO252-3
MOSFET N-CH 650V 300MA TO252-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 650 V 300mA (Tj) 2.5W (Ta) ytmonterad TO-252 (DPAK)
N-Kanal 650 V 300mA (Tj) 2.5W (Ta) ytmonterad TO-252 (DPAK)
Beskrivning (eng)
Beskrivning (eng)
The DN3765K4-G is an N-Channel MOSFET with a breakdown voltage of 650V and a maximum continuous drain current of 300mA. It features low on-resistance (RDS(ON) of 8.0Ω), fast switching speeds, and high input impedance, making it suitable for various applications. The device is housed in a TO-252 (DPAK) package, ensuring efficient thermal performance.
The DN3765K4-G is an N-Channel MOSFET with a breakdown voltage of 650V and a maximum continuous drain current of 300mA. It features low on-resistance (RDS(ON) of 8.0Ω), fast switching speeds, and high input impedance, making it suitable for various applications. The device is housed in a TO-252 (DPAK) package, ensuring efficient thermal performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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