DN2625K4-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 250V 1.1A TO252
MOSFET N-CH 250V 1.1A TO252
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 250 V 1.1A (Tj) ytmonterad TO-252 (DPAK)
N-Kanal 250 V 1.1A (Tj) ytmonterad TO-252 (DPAK)
Beskrivning (eng)
Beskrivning (eng)
The DN2625K4-G is an N-Channel Depletion-mode MOSFET designed for high-performance applications. It features a breakdown voltage of 250V and a continuous drain current of 1.1A. This surface-mounted TO-252 package device exhibits low on-state resistance (RDS(on)) of 3.5Ω, making it suitable for inductive loads and applications requiring low switching losses and high input impedance.
The DN2625K4-G is an N-Channel Depletion-mode MOSFET designed for high-performance applications. It features a breakdown voltage of 250V and a continuous drain current of 1.1A. This surface-mounted TO-252 package device exhibits low on-state resistance (RDS(on)) of 3.5Ω, making it suitable for inductive loads and applications requiring low switching losses and high input impedance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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