DN2535N3-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 350V 120MA TO92
MOSFET N-CH 350V 120MA TO92
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 350 V 120mA (Tj) 1W (Tc) Genomgående hål TO-92 (TO-226)
N-Kanal 350 V 120mA (Tj) 1W (Tc) Genomgående hål TO-92 (TO-226)
Beskrivning (eng)
Beskrivning (eng)
The DN2535N3-G is an N-Channel Depletion-mode MOSFET with a breakdown voltage of 350V and a maximum continuous drain current of 120mA. It features low on-resistance (RDS(ON) of 25Ω), high input impedance, and fast switching speeds, making it suitable for various applications including solid-state relays and power supply circuits. The device is housed in a TO-92 package.
The DN2535N3-G is an N-Channel Depletion-mode MOSFET with a breakdown voltage of 350V and a maximum continuous drain current of 120mA. It features low on-resistance (RDS(ON) of 25Ω), high input impedance, and fast switching speeds, making it suitable for various applications including solid-state relays and power supply circuits. The device is housed in a TO-92 package.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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