CNY17F4M
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
OPTOISO 4.17KV TRANS 6DIP
OPTOISO 4.17KV TRANS 6DIP
Detaljerad specifikation
Detaljerad specifikation
Optoisolator Transistor Utgång 4170Vrms 1 Kanal 6-DIP
Optoisolator Transistor Utgång 4170Vrms 1 Kanal 6-DIP
Beskrivning (eng)
Beskrivning (eng)
The CNY17F4M is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a 6-DIP package. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. The device is designed for low noise susceptibility and has a current transfer ratio (CTR) ranging from 160% to 320%. It is suitable for various applications including power supply regulators and industrial controls.
The CNY17F4M is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a 6-DIP package. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. The device is designed for low noise susceptibility and has a current transfer ratio (CTR) ranging from 160% to 320%. It is suitable for various applications including power supply regulators and industrial controls.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Jan-Erik eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K