CNY17F3VM
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
OPTOISO 4.17KV TRANS 6DIP
OPTOISO 4.17KV TRANS 6DIP
Detaljerad specifikation
Detaljerad specifikation
Optoisolator Transistor Utgång 4170Vrms 1 Kanal 6-DIP
Optoisolator Transistor Utgång 4170Vrms 1 Kanal 6-DIP
Beskrivning (eng)
Beskrivning (eng)
The CNY17F3VM from onsemi is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. This device is housed in a 6-DIP package and is designed for applications requiring electrical isolation and signal transmission.
The CNY17F3VM from onsemi is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. This device is housed in a 6-DIP package and is designed for applications requiring electrical isolation and signal transmission.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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