CNY17F2M
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
OPTOISO 4.17KV TRANS 6DIP
OPTOISO 4.17KV TRANS 6DIP
Detaljerad specifikation
Detaljerad specifikation
Optoisolator Transistor Utgång 4170Vrms 1 Kanal 6-DIP
Optoisolator Transistor Utgång 4170Vrms 1 Kanal 6-DIP
Beskrivning (eng)
Beskrivning (eng)
The CNY17F2M is an optoisolator featuring a transistor output with a high isolation voltage of 4170 Vrms. It consists of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a 6-DIP package. This device offers a minimum breakdown voltage of 70 V and a current transfer ratio (CTR) ranging from 63% to 125% at specified conditions, making it suitable for various applications.
The CNY17F2M is an optoisolator featuring a transistor output with a high isolation voltage of 4170 Vrms. It consists of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a 6-DIP package. This device offers a minimum breakdown voltage of 70 V and a current transfer ratio (CTR) ranging from 63% to 125% at specified conditions, making it suitable for various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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