CNY174VM
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detaljerad specifikation
Detaljerad specifikation
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-DIP
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-DIP
Beskrivning (eng)
Beskrivning (eng)
The CNY174VM is an optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a 6-pin DIP package. It offers an isolation voltage of 4170 Vrms and a high collector-emitter breakdown voltage (BVCEO) of 70 V minimum. The device is designed for low noise susceptibility and has a current transfer ratio (CTR) ranging from 160% to 320%. It is suitable for various applications including power supply regulators and industrial controls.
The CNY174VM is an optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a 6-pin DIP package. It offers an isolation voltage of 4170 Vrms and a high collector-emitter breakdown voltage (BVCEO) of 70 V minimum. The device is designed for low noise susceptibility and has a current transfer ratio (CTR) ranging from 160% to 320%. It is suitable for various applications including power supply regulators and industrial controls.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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