CNY171SM
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
OPTOISO 4.17KV TRANS W/BASE 6SMD
OPTOISO 4.17KV TRANS W/BASE 6SMD
Detaljerad specifikation
Detaljerad specifikation
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-SMD
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-SMD
Beskrivning (eng)
Beskrivning (eng)
The CNY171SM is an optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor. It offers a high isolation voltage of 4170 Vrms and a minimum collector-emitter breakdown voltage (BVCEO) of 70 V. This device is designed for applications requiring electrical isolation and signal transmission, ensuring minimal noise susceptibility.
The CNY171SM is an optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor. It offers a high isolation voltage of 4170 Vrms and a minimum collector-emitter breakdown voltage (BVCEO) of 70 V. This device is designed for applications requiring electrical isolation and signal transmission, ensuring minimal noise susceptibility.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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