CMH07(TE12L,Q,M)
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
DIODE GEN PURP 200V 2A M-FLAT
DIODE GEN PURP 200V 2A M-FLAT
Detaljerad specifikation
Detaljerad specifikation
Diode 200 V 2A Ytmonterad M-FLAT (2.4x3.8 mm)
Diode 200 V 2A Ytmonterad M-FLAT (2.4x3.8 mm)
Beskrivning (eng)
Beskrivning (eng)
The CMH07 is a high-efficiency silicon epitaxial diode designed for general-purpose applications. It features a repetitive peak reverse voltage of 200 V and an average forward current of 2 A. The diode is housed in a compact M-FLAT package (2.4x3.8 mm), ensuring suitability for high-density board assembly. It offers a maximum peak forward voltage of 0.98 V and a very fast reverse-recovery time of 35 ns, making it ideal for radio-frequency rectification in switching regulators.
The CMH07 is a high-efficiency silicon epitaxial diode designed for general-purpose applications. It features a repetitive peak reverse voltage of 200 V and an average forward current of 2 A. The diode is housed in a compact M-FLAT package (2.4x3.8 mm), ensuring suitability for high-density board assembly. It offers a maximum peak forward voltage of 0.98 V and a very fast reverse-recovery time of 35 ns, making it ideal for radio-frequency rectification in switching regulators.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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