BUV21G
Tillverkare
SANYO
Datablad
Datablad
Specifikation
Specifikation
SWITCHMODE NPN SILICON POWER TRA
SWITCHMODE NPN SILICON POWER TRA
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 200 V 40 A 8MHz 250 W Genomgående hål TO-204 (TO-3)
Bipolär (BJT) Transistor NPN 200 V 40 A 8MHz 250 W Genomgående hål TO-204 (TO-3)
Beskrivning (eng)
Beskrivning (eng)
The BUV21G from Sanyo is a high-performance NPN silicon power transistor designed for switch mode applications. This bipolar junction transistor (BJT) operates at a maximum collector-emitter voltage of 200 V and can handle a collector current of up to 40 A, making it suitable for high-power switching applications. With a frequency response of 8 MHz and a power dissipation capability of 250 W, it is ideal for use in power amplifiers and other high-efficiency circuits. The device is housed in a TO-204 (TO-3) package, ensuring robust thermal performance and reliability in demanding environments.
The BUV21G from Sanyo is a high-performance NPN silicon power transistor designed for switch mode applications. This bipolar junction transistor (BJT) operates at a maximum collector-emitter voltage of 200 V and can handle a collector current of up to 40 A, making it suitable for high-power switching applications. With a frequency response of 8 MHz and a power dissipation capability of 250 W, it is ideal for use in power amplifiers and other high-efficiency circuits. The device is housed in a TO-204 (TO-3) package, ensuring robust thermal performance and reliability in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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