BSZ900N15NS3GATMA1
Tillverkare
INFINEON
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 150V 13A 8TSDSON
MOSFET N-CH 150V 13A 8TSDSON
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 150 V 13A (Tc) 38W (Tc) Ytmonterad PG-TSDSON-8
N-Kanal 150 V 13A (Tc) 38W (Tc) Ytmonterad PG-TSDSON-8
Beskrivning (eng)
Beskrivning (eng)
The BSZ900N15NS3GATMA1 is an N-Channel MOSFET rated for 150V and 13A with a maximum power dissipation of 38W. It features a low on-state resistance (RDS(on)) of 90 mΩ and operates within a temperature range of -55°C to 150°C. This surface-mounted device is optimized for high efficiency and low gate charge, making it suitable for various power applications.
The BSZ900N15NS3GATMA1 is an N-Channel MOSFET rated for 150V and 13A with a maximum power dissipation of 38W. It features a low on-state resistance (RDS(on)) of 90 mΩ and operates within a temperature range of -55°C to 150°C. This surface-mounted device is optimized for high efficiency and low gate charge, making it suitable for various power applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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