BSZ520N15NS3G
Tillverkare
INFINEON
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
Trans MOSFET N-CH 150V 21A 8-Pin TSDSON EP T/R
Trans MOSFET N-CH 150V 21A 8-Pin TSDSON EP T/R
Beskrivning (eng)
Beskrivning (eng)
The BSZ520N15NS3 G is a high-performance N-channel MOSFET from Infineon Technologies, designed for efficient power management applications. With a maximum drain-source voltage of 150V and a continuous drain current rating of 21A, this device is suitable for various switching applications. It features an 8-pin TSDSON EP package, ensuring a compact footprint and excellent thermal performance. The MOSFET is optimized for low RDS(on), providing reduced conduction losses and improved efficiency in power conversion circuits.
The BSZ520N15NS3 G is a high-performance N-channel MOSFET from Infineon Technologies, designed for efficient power management applications. With a maximum drain-source voltage of 150V and a continuous drain current rating of 21A, this device is suitable for various switching applications. It features an 8-pin TSDSON EP package, ensuring a compact footprint and excellent thermal performance. The MOSFET is optimized for low RDS(on), providing reduced conduction losses and improved efficiency in power conversion circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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