BSZ160N10NS3G
Tillverkare
INFINEON
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
MOSFET:er N-Ch 100V 40A TSDSON-8 OptiMOS 3
MOSFET:er N-Ch 100V 40A TSDSON-8 OptiMOS 3
Beskrivning (eng)
Beskrivning (eng)
The BSZ160N10NS3 G is an N-channel MOSFET designed for high-frequency switching applications, featuring a maximum drain-source voltage of 100V and a continuous drain current of 40A. It offers low on-state resistance (RDS(on)) of 16 mΩ and is optimized for DC/DC converters, ensuring efficient power management.
The BSZ160N10NS3 G is an N-channel MOSFET designed for high-frequency switching applications, featuring a maximum drain-source voltage of 100V and a continuous drain current of 40A. It offers low on-state resistance (RDS(on)) of 16 mΩ and is optimized for DC/DC converters, ensuring efficient power management.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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