BSZ086P03NS3EGATMA1
Tillverkare
INFINEON
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 30V 13.5A/40A TSDSON
MOSFET P-CH 30V 13.5A/40A TSDSON
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 30 V 13.5A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) ytmonterad PG-TSDSON-8.
P-Kanal 30 V 13.5A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) ytmonterad PG-TSDSON-8.
Beskrivning (eng)
Beskrivning (eng)
The BSZ086P03NS3EGATMA1 is a P-Channel MOSFET with a maximum VDS of -30 V and continuous drain current of -40 A. It features a low RDS(on) of 8.6 mΩ, making it suitable for high-efficiency applications. The device operates at a temperature range of -55 °C to 150 °C and is housed in a PG-TSDSON-8 package, ideal for surface mount technology.
The BSZ086P03NS3EGATMA1 is a P-Channel MOSFET with a maximum VDS of -30 V and continuous drain current of -40 A. It features a low RDS(on) of 8.6 mΩ, making it suitable for high-efficiency applications. The device operates at a temperature range of -55 °C to 150 °C and is housed in a PG-TSDSON-8 package, ideal for surface mount technology.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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