BSS84
Tillverkare
ANBON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
P-CHANNEL ENHANCEMENT MODE MOSFE
P-CHANNEL ENHANCEMENT MODE MOSFE
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 50 V 130mA (Ta) 225mW (Ta) ytmonterad SOT-23
P-Kanal 50 V 130mA (Ta) 225mW (Ta) ytmonterad SOT-23
Beskrivning (eng)
Beskrivning (eng)
The BSS84 is a P-Channel Enhancement Mode MOSFET designed for energy-efficient applications. It features a maximum Drain-Source Voltage of 50 V, continuous Drain Current of 130 mA, and a power dissipation of 225 mW. The device is housed in a miniature SOT-23 surface mount package, ensuring low on-state resistance (RDS(on)) and high-speed switching capabilities, with ESD protection up to 2 kV.
The BSS84 is a P-Channel Enhancement Mode MOSFET designed for energy-efficient applications. It features a maximum Drain-Source Voltage of 50 V, continuous Drain Current of 130 mA, and a power dissipation of 225 mW. The device is housed in a miniature SOT-23 surface mount package, ensuring low on-state resistance (RDS(on)) and high-speed switching capabilities, with ESD protection up to 2 kV.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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