BSS138RFG
Tillverkare
TAIWAN SEMICONDUCTORS
Datablad
Datablad
Specifikation
Specifikation
50V, 0.26A, SINGLE N-CHANNEL POW
50V, 0.26A, SINGLE N-CHANNEL POW
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 50 V 260mA (Ta) 357mW (Ta) ytmonterad SOT-23
N-Kanal 50 V 260mA (Ta) 357mW (Ta) ytmonterad SOT-23
Beskrivning (eng)
Beskrivning (eng)
The BSS138 RFG is an N-Channel Power MOSFET with a maximum Drain-Source Voltage (VDS) of 50V and a continuous Drain Current (ID) of 260mA. It features a low on-state resistance (RDS(on)) of 2.5Ω at VGS = 10V, making it suitable for efficient power switching applications. The device is housed in a SOT-23 package and is RoHS compliant.
The BSS138 RFG is an N-Channel Power MOSFET with a maximum Drain-Source Voltage (VDS) of 50V and a continuous Drain Current (ID) of 260mA. It features a low on-state resistance (RDS(on)) of 2.5Ω at VGS = 10V, making it suitable for efficient power switching applications. The device is housed in a SOT-23 package and is RoHS compliant.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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