BSS138
Tillverkare
ANBON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
N-CHANNEL ENHANCEMENT MODE MOSFE
N-CHANNEL ENHANCEMENT MODE MOSFE
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 50 V 220mA (Ta) 350mW (Ta) ytmonterad SOT-23
N-Kanal 50 V 220mA (Ta) 350mW (Ta) ytmonterad SOT-23
Beskrivning (eng)
Beskrivning (eng)
The BSS138 is an N-Channel Enhancement Mode MOSFET designed for applications requiring low on-resistance and high efficiency. It features a maximum Drain-Source Voltage (VDS) of 50 V, a continuous Drain Current (ID) of 0.22 A, and a power dissipation of 350 mW. The device is housed in a SOT-23 package, making it suitable for surface-mounted applications.
The BSS138 is an N-Channel Enhancement Mode MOSFET designed for applications requiring low on-resistance and high efficiency. It features a maximum Drain-Source Voltage (VDS) of 50 V, a continuous Drain Current (ID) of 0.22 A, and a power dissipation of 350 mW. The device is housed in a SOT-23 package, making it suitable for surface-mounted applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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