BSS123WRFG
Tillverkare
TAIWAN SEMICONDUCTORS
Datablad
Datablad
Specifikation
Specifikation
100V, 0.16A, SINGLE N-CHANNEL PO
100V, 0.16A, SINGLE N-CHANNEL PO
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 160mA (Ta) 298mW (Ta) ytmonterad SOT-323
N-Kanal 100 V 160mA (Ta) 298mW (Ta) ytmonterad SOT-323
Beskrivning (eng)
Beskrivning (eng)
The BSS123W RFG is a single N-Channel Power MOSFET with a maximum Drain-Source Voltage (VDS) of 100V and a continuous Drain Current (ID) of 160mA. It features a low RDS(on) of 5Ω at VGS = 10V, making it suitable for minimizing conductive losses. The device is housed in a SOT-323 package and is RoHS compliant, with a total power dissipation of 298mW at 25°C. It is ideal for low side load switching and general switch circuits.
The BSS123W RFG is a single N-Channel Power MOSFET with a maximum Drain-Source Voltage (VDS) of 100V and a continuous Drain Current (ID) of 160mA. It features a low RDS(on) of 5Ω at VGS = 10V, making it suitable for minimizing conductive losses. The device is housed in a SOT-323 package and is RoHS compliant, with a total power dissipation of 298mW at 25°C. It is ideal for low side load switching and general switch circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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