BSC190N12NS3G
Tillverkare
INFINEON
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The BSC190N12NS3 G is an N-channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 120V and a continuous drain current (ID) of 44A. The device is housed in a TDSON-8 package, optimized for efficient thermal management and minimal on-state resistance (RDS(on)).
The BSC190N12NS3 G is an N-channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 120V and a continuous drain current (ID) of 44A. The device is housed in a TDSON-8 package, optimized for efficient thermal management and minimal on-state resistance (RDS(on)).
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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