BGB741L7ESD-E6327
Tillverkare
INFINEON
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
RF-förstärkare RF BIP TRANSISTORS
RF-förstärkare RF BIP TRANSISTORS
Beskrivning (eng)
Beskrivning (eng)
The BGB741L7ESD is a high-performance broadband low noise amplifier (LNA) MMIC utilizing Infineon's SiGe:C bipolar technology. It operates in the frequency range of 50 MHz to 3.5 GHz, featuring a minimum noise figure of 1.05 dB at 2.4 GHz, a supply voltage range of 1.8 to 4.0 V, and robust RF input power handling of 20 dBm. Integrated ESD protection is rated at 2 kV HBM.
The BGB741L7ESD is a high-performance broadband low noise amplifier (LNA) MMIC utilizing Infineon's SiGe:C bipolar technology. It operates in the frequency range of 50 MHz to 3.5 GHz, featuring a minimum noise figure of 1.05 dB at 2.4 GHz, a supply voltage range of 1.8 to 4.0 V, and robust RF input power handling of 20 dBm. Integrated ESD protection is rated at 2 kV HBM.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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