BFP650H6327XTSA1
Tillverkare
INFINEON
Datablad
Datablad
Specifikation
Specifikation
RF TRANS NPN 4.5V 37GHZ SOT343-4
RF TRANS NPN 4.5V 37GHZ SOT343-4
Detaljerad specifikation
Detaljerad specifikation
RF Transistor NPN 4.5V 150mA 37GHz 500mW ytmonterad PG-SOT343-3D
RF Transistor NPN 4.5V 150mA 37GHz 500mW ytmonterad PG-SOT343-3D
Beskrivning (eng)
Beskrivning (eng)
The BFP650H6327XTSA1 is a high linearity, wideband NPN RF bipolar transistor utilizing SiGe:C technology. It operates at a collector-emitter voltage of 4.5V, with a maximum collector current of 150mA and a transition frequency (fT) of 42GHz. This device is designed for low noise and high linearity applications, making it suitable for amplifiers in SDARS receivers, ISM band applications, and multimedia systems. It features a minimum noise figure of 1 dB at 2.4 GHz and a power dissipation of 500mW.
The BFP650H6327XTSA1 is a high linearity, wideband NPN RF bipolar transistor utilizing SiGe:C technology. It operates at a collector-emitter voltage of 4.5V, with a maximum collector current of 150mA and a transition frequency (fT) of 42GHz. This device is designed for low noise and high linearity applications, making it suitable for amplifiers in SDARS receivers, ISM band applications, and multimedia systems. It features a minimum noise figure of 1 dB at 2.4 GHz and a power dissipation of 500mW.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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