BFP650FH6327XTSA1
Tillverkare
INFINEON
Datablad
Datablad
Specifikation
Specifikation
RF TRANS NPN 4.5V 42GHZ 4TSFP
RF TRANS NPN 4.5V 42GHZ 4TSFP
Detaljerad specifikation
Detaljerad specifikation
RF Transistor NPN 4.5V 150mA 42GHz 500mW ytmonterad 4-TSFP
RF Transistor NPN 4.5V 150mA 42GHz 500mW ytmonterad 4-TSFP
Beskrivning (eng)
Beskrivning (eng)
The BFP650FH6327XTSA1 is a robust silicon NPN RF bipolar transistor designed for high-frequency applications. It operates at a collector-emitter voltage of 4.5V, with a maximum frequency of 42GHz and a power dissipation of 500mW. This surface-mounted device features a low noise figure of 0.9 dB at 1.8 GHz and a high gain of 21.5 dB, making it suitable for various RF applications.
The BFP650FH6327XTSA1 is a robust silicon NPN RF bipolar transistor designed for high-frequency applications. It operates at a collector-emitter voltage of 4.5V, with a maximum frequency of 42GHz and a power dissipation of 500mW. This surface-mounted device features a low noise figure of 0.9 dB at 1.8 GHz and a high gain of 21.5 dB, making it suitable for various RF applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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