BFP183E7764HTSA1
Tillverkare
INFINEON
Datablad
Datablad
Specifikation
Specifikation
RF TRANS NPN 12V 8GHZ SOT143-4
RF TRANS NPN 12V 8GHZ SOT143-4
Detaljerad specifikation
Detaljerad specifikation
RF Transistor NPN 12V 65mA 8GHz 250mW Ytmonterad PG-SOT-143-3D
RF Transistor NPN 12V 65mA 8GHz 250mW Ytmonterad PG-SOT-143-3D
Beskrivning (eng)
Beskrivning (eng)
The BFP183 is a low noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at a collector current range of 2 mA to 30 mA, with a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. The device features a maximum collector-emitter voltage (VCEO) of 12 V and a total power dissipation of 250 mW, packaged in a surface-mounted SOT143-4 configuration.
The BFP183 is a low noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at a collector current range of 2 mA to 30 mA, with a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. The device features a maximum collector-emitter voltage (VCEO) of 12 V and a total power dissipation of 250 mW, packaged in a surface-mounted SOT143-4 configuration.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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