BF570,215
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA BF570 - SMALL SIGNAL BI
NEXPERIA BF570 - SMALL SIGNAL BI
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 15 V 100 mA 490 MHz 250 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor NPN 15 V 100 mA 490 MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The NEXPERIA BF570 is a small signal bipolar NPN transistor designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 15 V and can handle a collector current of up to 100 mA. With a transition frequency of 490 MHz and a power dissipation capability of 250 mW, this surface-mounted device is ideal for RF amplification and switching applications. Packaged in a TO-236AB form factor, it offers compact dimensions suitable for space-constrained designs, ensuring reliable performance in various electronic circuits.
The NEXPERIA BF570 is a small signal bipolar NPN transistor designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 15 V and can handle a collector current of up to 100 mA. With a transition frequency of 490 MHz and a power dissipation capability of 250 mW, this surface-mounted device is ideal for RF amplification and switching applications. Packaged in a TO-236AB form factor, it offers compact dimensions suitable for space-constrained designs, ensuring reliable performance in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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