BDW93CFP
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN DARL 100V 12A TO220FP
TRANS NPN DARL 100V 12A TO220FP
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN - Darlington 100 V 12 A 33 W Genomgående hål TO-220FP
Bipolär (BJT) Transistor NPN - Darlington 100 V 12 A 33 W Genomgående hål TO-220FP
Beskrivning (eng)
Beskrivning (eng)
The BDW93CFP is a silicon Epitaxial-Base NPN Darlington transistor designed for power linear and switching applications. It features a maximum collector-emitter voltage of 100 V, a collector current of 12 A, and a total dissipation of 33 W. The device is housed in a TO-220FP fully molded insulated package, ensuring reliable performance in demanding environments.
The BDW93CFP is a silicon Epitaxial-Base NPN Darlington transistor designed for power linear and switching applications. It features a maximum collector-emitter voltage of 100 V, a collector current of 12 A, and a total dissipation of 33 W. The device is housed in a TO-220FP fully molded insulated package, ensuring reliable performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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