BD911
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 100V 15A TO220
TRANS NPN 100V 15A TO220
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 100 V 15 A 3MHz 90 W Genom hål TO-220
Bipolär (BJT) Transistor NPN 100 V 15 A 3MHz 90 W Genom hål TO-220
Beskrivning (eng)
Beskrivning (eng)
The BD911 is a silicon Epitaxial-Base NPN power transistor designed for power linear and switching applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 15 A, and a total dissipation of 90 W. The device operates at a transition frequency of 3 MHz and is housed in a TO-220 package, making it suitable for various high-power applications.
The BD911 is a silicon Epitaxial-Base NPN power transistor designed for power linear and switching applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 15 A, and a total dissipation of 90 W. The device operates at a transition frequency of 3 MHz and is housed in a TO-220 package, making it suitable for various high-power applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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