BD682
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP DARL 100V 4A SOT32-3
TRANS PNP DARL 100V 4A SOT32-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP - Darlington 100 V 4 A 40 W Genomgående hål SOT-32-3
Bipolär (BJT) Transistor PNP - Darlington 100 V 4 A 40 W Genomgående hål SOT-32-3
Beskrivning (eng)
Beskrivning (eng)
The BD682 is a PNP Darlington transistor designed for high-performance applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 4 A, and a total power dissipation of 40 W. The device is optimized for linear and switching applications, providing good hFE linearity and high fT frequency in a compact SOT-32-3 package.
The BD682 is a PNP Darlington transistor designed for high-performance applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 4 A, and a total power dissipation of 40 W. The device is optimized for linear and switching applications, providing good hFE linearity and high fT frequency in a compact SOT-32-3 package.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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