BD681
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN DARL 100V 4A SOT32-3
TRANS NPN DARL 100V 4A SOT32-3
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A 40 W Genomgående hål SOT-32-3
Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A 40 W Genomgående hål SOT-32-3
Beskrivning (eng)
Beskrivning (eng)
The BD681 is a NPN Darlington transistor designed for high-performance applications. It features a collector-emitter voltage of 100 V, a collector current of 4 A, and a total power dissipation of 40 W. The device is housed in a SOT-32-3 package and integrates an antiparallel collector-emitter diode, ensuring reliable operation in both linear and switching applications.
The BD681 is a NPN Darlington transistor designed for high-performance applications. It features a collector-emitter voltage of 100 V, a collector current of 4 A, and a total power dissipation of 40 W. The device is housed in a SOT-32-3 package and integrates an antiparallel collector-emitter diode, ensuring reliable operation in both linear and switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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