BD679A
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MEDIUM POWER NPN DARLINGTON BIPO
MEDIUM POWER NPN DARLINGTON BIPO
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Genomgående hål TO-126
Bipolär (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Genomgående hål TO-126
Beskrivning (eng)
Beskrivning (eng)
The BD679A is a medium power NPN Darlington bipolar transistor designed for linear and switching applications. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) rating of 4 A, and a power dissipation of 40 W. This through-hole TO-126 package device is suitable for various medium power applications, providing high current gain and efficient performance.
The BD679A is a medium power NPN Darlington bipolar transistor designed for linear and switching applications. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) rating of 4 A, and a power dissipation of 40 W. This through-hole TO-126 package device is suitable for various medium power applications, providing high current gain and efficient performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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