BD679
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN DARL 80V 4A TO126
TRANS NPN DARL 80V 4A TO126
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Genomgående hål TO-126
Bipolär (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Genomgående hål TO-126
Beskrivning (eng)
Beskrivning (eng)
The BD679 is a silicon NPN Darlington transistor designed for medium-power applications. It features a collector-emitter voltage rating of 80 V, a collector current of 4 A, and a total device dissipation of 40 W. This through-hole device is suitable for general-purpose amplifier applications, providing high DC current gain and monolithic construction.
The BD679 is a silicon NPN Darlington transistor designed for medium-power applications. It features a collector-emitter voltage rating of 80 V, a collector current of 4 A, and a total device dissipation of 40 W. This through-hole device is suitable for general-purpose amplifier applications, providing high DC current gain and monolithic construction.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Lukas eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K