BD677
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN DARL 60V 4A TO126
TRANS NPN DARL 60V 4A TO126
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN - Darlington 60 V 4 A 40 W Genomgående hål TO-126
Bipolär (BJT) Transistor NPN - Darlington 60 V 4 A 40 W Genomgående hål TO-126
Beskrivning (eng)
Beskrivning (eng)
The BD677 is a silicon NPN Darlington transistor designed for medium-power applications. It features a collector-emitter voltage rating of 60 V, a collector current of 4 A, and a total device dissipation of 40 W. This through-hole device is suitable for general-purpose amplifier applications, providing high DC current gain and monolithic construction.
The BD677 is a silicon NPN Darlington transistor designed for medium-power applications. It features a collector-emitter voltage rating of 60 V, a collector current of 4 A, and a total device dissipation of 40 W. This through-hole device is suitable for general-purpose amplifier applications, providing high DC current gain and monolithic construction.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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