BD241C
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 100V 3A TO220
TRANS NPN 100V 3A TO220
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 100 V 3 A 40 W Genomgående hål TO-220
Bipolär (BJT) Transistor NPN 100 V 3 A 40 W Genomgående hål TO-220
Beskrivning (eng)
Beskrivning (eng)
The BD241C is a silicon epitaxial-base NPN transistor designed for medium power linear and switching applications. It features a collector-emitter voltage (VCEO) of 100 V, a collector current (IC) of 3 A, and a total dissipation of 40 W in a TO-220 package. This transistor is suitable for various electronic circuits requiring reliable performance.
The BD241C is a silicon epitaxial-base NPN transistor designed for medium power linear and switching applications. It features a collector-emitter voltage (VCEO) of 100 V, a collector current (IC) of 3 A, and a total dissipation of 40 W in a TO-220 package. This transistor is suitable for various electronic circuits requiring reliable performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Jan-Erik eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K