BD239C
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 100V 2A TO220
TRANS NPN 100V 2A TO220
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 100 V 2 A 2 W Genomgående hål TO-220
Bipolär (BJT) Transistor NPN 100 V 2 A 2 W Genomgående hål TO-220
Beskrivning (eng)
Beskrivning (eng)
The BD239C is an NPN power transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 100 V, a collector current of 2 A, and a total power dissipation of 30 W at a case temperature of 25°C. The device is built using planar technology with a 'Base Island' layout, ensuring high gain performance and low saturation voltage.
The BD239C is an NPN power transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 100 V, a collector current of 2 A, and a total power dissipation of 30 W at a case temperature of 25°C. The device is built using planar technology with a 'Base Island' layout, ensuring high gain performance and low saturation voltage.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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