BD13810STU
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 60V 1.5A TO126-3
TRANS PNP 60V 1.5A TO126-3
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor PNP 60 V 1.5 A 1.25 W Genomgående hål TO-126-3
Bipolar (BJT) Transistor PNP 60 V 1.5 A 1.25 W Genomgående hål TO-126-3
Beskrivning (eng)
Beskrivning (eng)
The BD13810STU is a PNP bipolar junction transistor (BJT) designed for medium power linear and switching applications. It features a collector-emitter voltage (VCEO) of 60 V, a collector current (IC) of 1.5 A, and a power dissipation of 1.25 W. The device is housed in a TO-126-3 package, making it suitable for through-hole mounting. With a maximum junction temperature of 150 °C, it is ideal for various electronic applications requiring reliable performance.
The BD13810STU is a PNP bipolar junction transistor (BJT) designed for medium power linear and switching applications. It features a collector-emitter voltage (VCEO) of 60 V, a collector current (IC) of 1.5 A, and a power dissipation of 1.25 W. The device is housed in a TO-126-3 package, making it suitable for through-hole mounting. With a maximum junction temperature of 150 °C, it is ideal for various electronic applications requiring reliable performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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