BD13616S
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 45V 1.5A TO126-3
TRANS PNP 45V 1.5A TO126-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 45 V 1.5 A 1.25 W Genomgående hål TO-126-3
Bipolär (BJT) Transistor PNP 45 V 1.5 A 1.25 W Genomgående hål TO-126-3
Beskrivning (eng)
Beskrivning (eng)
The BD13616S is a PNP bipolar junction transistor (BJT) designed for medium power linear and switching applications. It features a maximum collector-emitter voltage (VCEO) of 45V and a collector current (IC) rating of 1.5A. The device is housed in a TO-126-3 package and offers a power dissipation of 1.25W at 25°C. With a junction temperature rating of 150°C, it is suitable for various electronic applications requiring reliable performance.
The BD13616S is a PNP bipolar junction transistor (BJT) designed for medium power linear and switching applications. It features a maximum collector-emitter voltage (VCEO) of 45V and a collector current (IC) rating of 1.5A. The device is housed in a TO-126-3 package and offers a power dissipation of 1.25W at 25°C. With a junction temperature rating of 150°C, it is suitable for various electronic applications requiring reliable performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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