BD13610STU
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
POWER BIPOLAR TRANSISTOR, 1.5A,
POWER BIPOLAR TRANSISTOR, 1.5A,
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 45 V 1.5 A 1.25 W Genom hål TO-126-3
Bipolär (BJT) Transistor PNP 45 V 1.5 A 1.25 W Genom hål TO-126-3
Beskrivning (eng)
Beskrivning (eng)
The BD13610STU is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring reliable switching and amplification. With a maximum collector current of 1.5 A and a collector-emitter voltage rating of 45 V, this transistor is suitable for medium power applications. It has a power dissipation capability of 1.25 W and comes in a TO-126-3 through-hole package, making it easy to integrate into existing designs. Its robust construction ensures durability and consistent performance in demanding environments.
The BD13610STU is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring reliable switching and amplification. With a maximum collector current of 1.5 A and a collector-emitter voltage rating of 45 V, this transistor is suitable for medium power applications. It has a power dissipation capability of 1.25 W and comes in a TO-126-3 through-hole package, making it easy to integrate into existing designs. Its robust construction ensures durability and consistent performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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