BCP56-16
Tillverkare
DIOTEC
Datablad
Datablad
Specifikation
Specifikation
BJT SOT223 80V 1000MA NPN 2W
BJT SOT223 80V 1000MA NPN 2W
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 80 V 1 A 100MHz 1.3 W ytmonterad SOT-223
Bipolär (BJT) Transistor NPN 80 V 1 A 100MHz 1.3 W ytmonterad SOT-223
Beskrivning (eng)
Beskrivning (eng)
The BCP56-16 is a high-performance NPN bipolar junction transistor (BJT) in a surface mount SOT-223 package. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) of 1 A, and a power dissipation (Ptot) of 2 W. With a gain-bandwidth product of 100 MHz and a maximum junction temperature of 150°C, it is suitable for signal processing, switching, and amplification applications.
The BCP56-16 is a high-performance NPN bipolar junction transistor (BJT) in a surface mount SOT-223 package. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) of 1 A, and a power dissipation (Ptot) of 2 W. With a gain-bandwidth product of 100 MHz and a maximum junction temperature of 150°C, it is suitable for signal processing, switching, and amplification applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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