BC857W,135
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NOW NEXPERIA BC857W - SMALL SIGN
NOW NEXPERIA BC857W - SMALL SIGN
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 45 V 100 mA 100MHz 200 mW ytmonterad SOT-323
Bipolär (BJT) Transistor PNP 45 V 100 mA 100MHz 200 mW ytmonterad SOT-323
Beskrivning (eng)
Beskrivning (eng)
The NXP BC857W is a PNP bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 45 V and can handle a collector current of up to 100 mA. With a transition frequency of 100 MHz and a power dissipation of 200 mW, this transistor is suitable for various signal amplification tasks. Packaged in a compact SOT-323 surface mount configuration, it is ideal for space-constrained applications in consumer electronics and communication devices.
The NXP BC857W is a PNP bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 45 V and can handle a collector current of up to 100 mA. With a transition frequency of 100 MHz and a power dissipation of 200 mW, this transistor is suitable for various signal amplification tasks. Packaged in a compact SOT-323 surface mount configuration, it is ideal for space-constrained applications in consumer electronics and communication devices.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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