BC857BQAZ
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA BC857 - 45 V, 100 MA PN
NEXPERIA BC857 - 45 V, 100 MA PN
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 45 V 100 mA 100MHz 280 mW ytmonterad DFN1010D-3
Bipolär (BJT) Transistor PNP 45 V 100 mA 100MHz 280 mW ytmonterad DFN1010D-3
Beskrivning (eng)
Beskrivning (eng)
The NXP Semiconductors BC857 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a collector-emitter voltage of -45 V and a collector current of -100 mA, with a maximum power dissipation of 280 mW. The device features a low profile DFN1010D-3 package, suitable for surface mounting, and offers three current gain selections ranging from 125 to 800.
The NXP Semiconductors BC857 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a collector-emitter voltage of -45 V and a collector current of -100 mA, with a maximum power dissipation of 280 mW. The device features a low profile DFN1010D-3 package, suitable for surface mounting, and offers three current gain selections ranging from 125 to 800.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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