BC857AW,115
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA BC857AW - SMALL SIGNAL
NEXPERIA BC857AW - SMALL SIGNAL
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 45 V 100 mA 100 MHz 200 mW ytmonterad SOT-323
Bipolär (BJT) Transistor PNP 45 V 100 mA 100 MHz 200 mW ytmonterad SOT-323
Beskrivning (eng)
Beskrivning (eng)
The NEXPERIA BC857AW is a PNP bipolar junction transistor (BJT) designed for small signal applications. It operates with a maximum collector-emitter voltage of 45 V and can handle a collector current of up to 100 mA. With a transition frequency of 100 MHz and a power dissipation of 200 mW, this surface-mounted device is housed in a compact SOT-323 package. The BC857AW is ideal for use in low-power amplification and switching applications, making it suitable for various electronic circuits requiring efficient signal processing.
The NEXPERIA BC857AW is a PNP bipolar junction transistor (BJT) designed for small signal applications. It operates with a maximum collector-emitter voltage of 45 V and can handle a collector current of up to 100 mA. With a transition frequency of 100 MHz and a power dissipation of 200 mW, this surface-mounted device is housed in a compact SOT-323 package. The BC857AW is ideal for use in low-power amplification and switching applications, making it suitable for various electronic circuits requiring efficient signal processing.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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