BC856W,115
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA BC856W - SMALL SIGNAL B
NEXPERIA BC856W - SMALL SIGNAL B
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 65 V 100 mA 100 MHz 200 mW ytmonterad SOT-323
Bipolär (BJT) Transistor PNP 65 V 100 mA 100 MHz 200 mW ytmonterad SOT-323
Beskrivning (eng)
Beskrivning (eng)
The NEXPERIA BC856W is a PNP bipolar junction transistor (BJT) designed for small signal applications. It features a maximum collector-emitter voltage of 65 V, a collector current rating of 100 mA, and a transition frequency of 100 MHz, making it suitable for high-frequency applications. The device is housed in a compact SOT-323 surface mount package, allowing for efficient space utilization on printed circuit boards. With a maximum power dissipation of 200 mW, it is ideal for low-power amplification and switching tasks in various electronic circuits.
The NEXPERIA BC856W is a PNP bipolar junction transistor (BJT) designed for small signal applications. It features a maximum collector-emitter voltage of 65 V, a collector current rating of 100 mA, and a transition frequency of 100 MHz, making it suitable for high-frequency applications. The device is housed in a compact SOT-323 surface mount package, allowing for efficient space utilization on printed circuit boards. With a maximum power dissipation of 200 mW, it is ideal for low-power amplification and switching tasks in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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