BC856A
Tillverkare
DIOTEC
Datablad
Datablad
Specifikation
Specifikation
BJT SOT23 65V 100MA PNP 0.25W
BJT SOT23 65V 100MA PNP 0.25W
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 65 V 100 mA 100MHz 250 mW Ytmonterad SOT-23-3 (TO-236)
Bipolär (BJT) Transistor PNP 65 V 100 mA 100MHz 250 mW Ytmonterad SOT-23-3 (TO-236)
Beskrivning (eng)
Beskrivning (eng)
The BC856A is a PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package, rated for a collector-emitter voltage (VCEO) of -65V and a collector current (IC) of -100mA. It features a power dissipation of 250mW and a gain (hFE) of approximately 180 to 520. The device operates at a maximum junction temperature of 150°C and is suitable for general-purpose applications including signal processing, switching, and amplification.
The BC856A is a PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package, rated for a collector-emitter voltage (VCEO) of -65V and a collector current (IC) of -100mA. It features a power dissipation of 250mW and a gain (hFE) of approximately 180 to 520. The device operates at a maximum junction temperature of 150°C and is suitable for general-purpose applications including signal processing, switching, and amplification.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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