BAS21QB-QZ
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
DIODE GP 200V 250MA DFN1110D-3
DIODE GP 200V 250MA DFN1110D-3
Detaljerad specifikation
Detaljerad specifikation
Diode 200 V 250mA ytmonterad, Wettable Flank DFN1110D-3
Diode 200 V 250mA ytmonterad, Wettable Flank DFN1110D-3
Beskrivning (eng)
Beskrivning (eng)
The BAS21QB-QZ is a high-voltage switching diode encapsulated in an ultra-small DFN1110D-3 (SOT8015) leadless surface-mounted device package. It features a reverse voltage of 200 V, forward current of 250 mA, and a low reverse recovery time (trr ≤ 50 ns). This diode is suitable for high-speed switching, voltage clamping, and reverse polarity protection applications.
The BAS21QB-QZ is a high-voltage switching diode encapsulated in an ultra-small DFN1110D-3 (SOT8015) leadless surface-mounted device package. It features a reverse voltage of 200 V, forward current of 250 mA, and a low reverse recovery time (trr ≤ 50 ns). This diode is suitable for high-speed switching, voltage clamping, and reverse polarity protection applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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